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Serveur d'exploration sur l'Indium - Repository (Accueil)

Index « Pays » - entrée « République de Chine (Taïwan) »
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Russie < République de Chine (Taïwan) < République de Macédoine (pays)  Facettes :

List of bibliographic references

Number of relevant bibliographic references: 34.
[20-40] [0 - 20][0 - 34]
Ident.Authors (with country if any)Title
010216 (2001-05) Numerical indicator field emission display using carbon nanotubes as emitters
010228 (2001-04-30) Investigation of the emission mechanism in InGaN/GaN-based light-emitting diodes
010236 (2001-04-30) High-Brightness Wafer-Bonded Indium-Tin Oxide/Light-Emitting Diode/Mirror/Si
010492 (2001-02-01) Photoreflectance studies of surface state density of InAlAs
010566 (2001-01-01) Photoreflectance study of the surface state density and distribution function of InAlAs
011E05 (2000-07-20) Electroreflectance and photoreflectance studies of surface Fermi level and surface state densities of InP SIN+ structures
012113 (2000-04-30) Wafer-Bonded AlGaInP/Au/AuBe/SiO2/Si Light-Emitting Diodes
012184 (2000-04-15) Efficient Terahertz Radiation Generation from a Bulk InAs Mirror as an Intracavity Terahertz Radiation Emitter
013A67 (1999-10-18) Energy spectrum of surface states of lattice-matched In0.52Al0.48As surface intrinsic-n+ structure
013A69 (1999-10-15) Two-photon optical-beam-induced current imaging of indium gallium nitride blue light-emitting diodes
017A57 (1997-09-01) Doping effect on normal incident InGaAs/GaAs long-wavelength quantum well infrared photodetectors
017B72 (1997-08) Annealing effects on the properties of indium tin oxide films coated on soda lime glasses with a barrier layer of TiO2-SiO2 composite films
019843 (1996-10-14) A voltage-tunable multicolor triple-coupled InGaAs/GaAs/AlGaAs quantum-well infrared photodetector for 8-12 μm detection
019C79 (1996-05-06) High optical quality of strained (111)B In0.12Ga0.88As/GaAs and In0.12Ga0.88As/Al0.2Ga0.8As multiple quantum wells

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